Samsung Electronics and Advanced Micro Devices have entered into a new agreement to strengthen collaboration on advanced memory chips tailored for artificial intelligence systems. This initiative aims to secure key components for future AI products as competition in the sector intensifies.
The signed memorandum of understanding details plans for Samsung to synchronize its supply of sixth-generation HBM4 memory with AMD’s upcoming Instinct MI455X GPU, a next-generation AI accelerator. The companies will also advance their work on sophisticated DRAM technologies, specifically designed for AMD’s future EPYC “Venice” CPUs.
Samsung has previously provided HBM3E chips for use in AMD’s MI350X and MI355X accelerators, cementing its status as a principal supplier of high-bandwidth memory to the U.S. chipmaker.
The latest HBM4 product from Samsung, described by the company as the first in the industry to achieve mass production, utilizes the firm’s sixth-generation 10-nanometer-class DRAM process and features a 4-nanometer logic base die. Performance metrics include throughput reaching up to 13 gigabits per second and overall bandwidth as high as 3.3 terabytes per second.
Alongside this, Samsung and AMD are exploring the possibility of establishing a foundry relationship, which may lead to Samsung manufacturing advanced semiconductor products for AMD through contract chip fabrication.
This expanded alliance highlights the growing importance of integrated memory solutions and strong supply chain partnerships as global demand accelerates for high-performance AI semiconductor products.
Samsung, which stands as the leading global supplier of memory chips, is working to close the gap in high-bandwidth memory with competitors. The company currently claims around 22% of the worldwide HBM market, while SK Hynix maintains a stronger position with approximately 57%, according to research from Counterpoint.
